2SC1654_0712 [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
| 型号： | 2SC1654_0712 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC1654
FEATURES
Pb
Lead-free
z
z
High DC current gain:hFE=130(Typ)
(VCE=3V,IC=15mA)
High voltage.
APPLICATIONS
z
Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No.
2SC1654
Marking
Package Code
SOT-23
N5/N6/N7
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
160
5
V
V
Collector Current -Continuous
Collector Dissipation
50
mA
mW
℃
PC
150
Junction and Storage Temperature
Tj,Tstg
-55~150
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC096
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC1654
Parameter
Symbol
Test conditions
MIN
180
160
5
TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=100μA,IE=0
IC=1mA,IB=0
IE=100μA,IC=0
VCB=130V,IE=0
VEB=5V,IC=0
V
V
V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
0.1
μA
μA
Emitter cut-off current
IEBO
0.1
VCE=3V,IC=15mA
VCE=3V,IC=5mA
90
70
200
180
400
DC current gain
hFE
Collector-emitter saturation
voltage
IC=50mA, IB=5mA
VCE(sat)
0.1
0.3
1
V
Base-emitter saturation voltage
Transition frequency
IC=50mA, IB=5mA
VBE(sat)
fT
0.73
V
VCE=10V, IC= 10mA
VCB=10V, IE=0,f=1kHz
120
MHz
pF
Output capacitance
Cob
2.3
CLASSIFICATION OF hFE(1)
Range
Marking
90-180
N5
135-270
N6
200-400
N7
Document number: BL/SSSTC096
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC1654
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC096
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC1654
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
G
H
J
0.1Typical
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
2SC1654
3000/Tape&Reel
Document number: BL/SSSTC096
Rev.A
www.galaxycn.com
4
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